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| RB886G Diodes Schottky barrier diode RB886G !Applications High frequency detection !External dimensions (Units : mm) 1.00.05 1.40.05 !Features 1) Small mold type. (VMD2) 2) Low Ct and high detection efficiency. 0.60.05 0.270.03 CATHODE MARK 0.130.03 0.50.05 !Construction Silicon epitaxial planar ROHM : VMD2 EIAJ : - JEDEC : - !Absolute maximum ratings (Ta=25C) Parameter Reverse voltage Forward current Junction temperature Storage temperature Symbol VR IF Tj Tstg Limits 5.0 10 125 -40~+125 Unit V mA C C !Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminal Symbol VF IR CT Min. - - - Typ. - - 0.53 Max. 0.35 120 0.80 Unit V A pF IF=1.0mA VR=5.0V VR=1.0V, f=1.0MHz Conditions Please pay attention to static electricity when handling. 1/2 RB886G Diodes !Electrical characteristic curves (Ta=25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 10 FORWARD CURRENT : IF (mA) 25C -25C 75C 125C 1000 0.9 0.8 f=1MHz REVERSE CURRENT : IR (AV) 125C 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 f=1.8GHz 1 100 75C 25C 0.1 10 -25C 0.01 0 0.4 0.8 1.2 1.6 1 0 1 2 3 4 REVERSE VOLTAGE : VR (V) 5 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics !Spice parameter Parameter 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IS N : : Saturation current Emission coefficient Ohmic resistance Transit time Junction capacitance Geading coefficient Junction potential Depretion cap. Coefficient Activation energy Isat temperature exponent Flicker noise coefficient Flicker noise exponent Reverse breakdown voltage I at V-breakdown Junction leakage resistance Value 8.79631E-06 2.24097 6.20008 - 4.21E-13 0.346685 0.7 0.5 1.11 3 - - 20 - 2.39557E+05 Unit A - SEC F - V - eV - - - V A RS : TT : CJO : M VJ FC : : : EG : XTI : KF AF BV : : : IBV : RL : 2/2 |
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